Characterization of optically dense, doped semiconductors by reflection THz time domain spectroscopy
نویسنده
چکیده
We present reflection THz-time domain spectroscopy measurements of the complex conductivity of n-type, 0.038 V cm GaAs and n-type, 0.22 V cm Si wafers. These measurements clearly demonstrate the efficacy of the reflection technique on highly conductive, optically dense samples and approach the precision of THz–TDS transmission measurements. Because the THz-bandwidth, reflection measurements extend beyond the carrier collision frequency, we obtain direct measures of the mobility and the carrier number density. © 1998 American Institute of Physics. @S0003-6951~98!04223-5#
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